BIDW20N60T

Name: BIDW20N60T
Brand: Bourns
SKU: 56630889
Price: 310.5 USD
Availability: InStock

IGBT Discrete 600V - 20A - TO-247 - -55°C to +150°C ...

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RoHS Compliant

TUBE Packaging

DESCRIPTION

BIDW20N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing a collector-emitter voltage of 600 V, continuous collector current of 20 A, and low collector-emitter saturation voltage (VCE(sat)) of 1.7 V typical at 25°C. The device offers total power dissipation of 192 W, low switching losses with turn-on energy of 1 mJ and turn-off energy of 0.3 mJ, and operates over a junction temperature range of -55°C to +150°C. Common applications include switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and stepper motor drives where optimized conduction and low switching losses are essential.

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Supplier:

Bourns

Part No:

BIDW20N60T

Unit of Measure:

Per Each

RoHS:

Yes

HTS:

8541290095

COO:

ECCN:

EAR99

Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.