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BIDW30N60T by bourns
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Bourns Authorized Distributor

BIDW30N60T

IGBT Discrete 600V - 30A - TO-247 - -55°C to +150°C ...

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RoHS Compliant
TUBE Packaging
Accessories
Certificate of Compliance

DESCRIPTION

BIDW30N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing low collector-emitter saturation voltage (VCE(sat) typ. 1.65 V at 30 A) and reduced switching losses. The device offers a collector-emitter voltage rating of 600 V, continuous collector current of 30 A at 100°C, and total power dissipation of 230 W. With fast switching characteristics including turn-on delay time of 30 ns and turn-off delay time of 67 ns, it is well-suited for switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating applications.

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SPECIFICATIONS

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Products found: 0
Supplier:
Bourns
Part No:
BIDW30N60T
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
CN
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
600
Package Type:
TUBE

IN STOCK: 2,199

Ships today, if you order in

Minimum Order Quantity: 56

Factory Lead-Time 16 Weeks

Price (USD)

Qty
Unit Price
56
$3.07
100
$2.49
250
$2.32
600
$2.25
1,200
$2.15
3,000
$2.10
5,400
$2.05
7,800 +
$2.04
Supplier's Standard Package
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