APT8030LVRG
Microchip TechnologyThe APT8030LVRG is an 800V, 27A N-Channel enhancement mode Power MOSFET designed for high-voltage, fast-switching applications. ...
DESCRIPTION
The APT8030LVRG is a high-voltage N-Channel enhancement mode power MOSFET belonging to the Power MOS V® family. It is engineered with a maximum drain-source voltage of 800V and a continuous drain current rating of 27A at a case temperature of 25°C. Key features include a low on-state resistance of 0.300Ω, a total power dissipation of 520W, and a high single pulse avalanche energy of 2500 mJ. The device operates across a junction temperature range of -55°C to 150°C. Housed in a TO-264 package and 100% avalanche tested, the APT8030LVRG is ideal for demanding power conversion and switching circuits requiring high reliability and performance.
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SPECIFICATIONS
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Factory Lead-Time 20 Weeks
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