TN2540N3-G-P002
Microchip TechnologyN-Channel Enhancement-Mode Vertical DMOS FET - 400V Vdss - 175mA (Id) @ 25°C - 12Ohm @ 500mA, 10V Rds On (Max) @ Id, Vgs - TO-92-3 - 2000/Reel.
DESCRIPTION
The TN2540N3-G-P002 low-threshold Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistor
Search Keywords: TN2540N3GP002
SPECIFICATIONS
IN STOCK: 0
MOQ for out of Stock Qty: 500
Factory Lead-Time 7 Weeks
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