MJ21196G
onsemiThe MJ21196G is an NPN silicon power transistor designed for high-power audio output, disk head positioners, and linear applications. ...
DESCRIPTION
The MJ21196G is an NPN silicon power transistor that utilizes Perforated Emitter technology for high-power applications. It is rated for a collector-emitter voltage of 250 V and a continuous collector current of 16 A, with a total power dissipation capacity of 250 W. This device features a high DC current gain with a minimum hFE of 25 at an 8 A collector current, ensuring excellent gain linearity and low total harmonic distortion. Due to its high Safe Operating Area (SOA) and robust design, the MJ21196G is ideal for high-fidelity audio amplifiers, disk head positioners, and other demanding linear circuits.
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SPECIFICATIONS
IN STOCK: 401
Can Ship immediately
On Order:
2,000
can ship 7/31/26
Minimum Order Quantity: 5
Factory Lead-Time 26 Weeks
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