MJD112-1G by onsemi
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onsemi Authorized Reseller

MJD112-1G

The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications. ...

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RoHS Non-Compliant
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Accessories
Certificate of Compliance

DESCRIPTION

The MJD112-1G is an NPN silicon Darlington power transistor intended for general-purpose power and switching tasks. This device is rated for a collector-emitter voltage of 100 V and a continuous collector current of 2 A, with a peak current rating of 4 A. It features a high DC current gain and can dissipate up to 20 W at a case temperature of 25°C. Housed in a DPAK-3 package with straight leads, it is suitable for use as an output or driver stage in applications such as switching regulators, converters, and power amplifiers.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
MJD112-1G
Unit of Measure:
Per Each
RoHS:
No
HTS:
8541290095
COO:
MY
ECCN:
EAR99
Supplier's Standard Package: The item count, length, weight, or volume contained in the supplier’s original packaging for efficient storage, handling, and distribution.
75
Dimension:
6.73(Max) x 2.38(Max) x 6.35(Max) mm
Family:
MJD112
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4@40mA@4A V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Saturation Voltage:
2@8mA@2A,3@40mA@4A V

IN STOCK: 42,150

Can Ship immediately

Minimum Order Quantity: 75

Multiple: 75

Factory Lead-Time 30 Weeks

Price (USD)

Qty
Unit Price
75
$0.9172
300
$0.6411
1,050
$0.5551
2,550
$0.5150
5,025
$0.5138
7,500
$0.5124
10,050
$0.5112
15,000 +
$0.5099
Supplier's Standard Package
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