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MJD112-1G by onsemi

MJD112-1G

onsemi

2.0 A, 100 V NPN Darlington Bipolar Power Transistor

Datasheet
RoHS Non-Compliant
TUBE Packaging
Accessories
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DESCRIPTION

2.0 A, 100 V NPN Darlington Bipolar Power Transistor

Search Keywords: MJD1121G

SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
MJD112-1G
RoHS:
No
HTS:
8541290095
COO:
MY
ECCN:
EAR99
Supplier Standard Pack:  This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
75
Package Type:
TUBE
Dimension:
6.73(Max) x 2.38(Max) x 6.35(Max) mm
Family:
MJD112
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4@40mA@4A V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Saturation Voltage:
2@8mA@2A,3@40mA@4A V

IN STOCK: 43,200

Ships today, if you order in

Minimum Order: 75

Multiple: 75

Factory Lead-Time 12 Weeks

Price (CAD)

Qty
Unit Price
75
$1.024
300
$0.888
1,050
$0.701
2,550
$0.666
5,025
$0.604
7,500
$0.601
10,050
$0.577
15,000 +
$0.574
Suppliers Standard Package
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