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MJD112-1G by onsemi
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MJD112-1G

The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications. ...

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RoHS Non-Compliant
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Accessories
Certificate of Compliance

DESCRIPTION

The MJD112-1G is an NPN silicon Darlington power transistor intended for general-purpose power and switching tasks. This device is rated for a collector-emitter voltage of 100 V and a continuous collector current of 2 A, with a peak current rating of 4 A. It features a high DC current gain and can dissipate up to 20 W at a case temperature of 25°C. Housed in a DPAK-3 package with straight leads, it is suitable for use as an output or driver stage in applications such as switching regulators, converters, and power amplifiers.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
MJD112-1G
Unit of Measure:
Per Each
RoHS:
No
HTS:
8541290095
COO:
MY
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
75
Dimension:
6.73(Max) x 2.38(Max) x 6.35(Max) mm
Family:
MJD112
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4@40mA@4A V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Saturation Voltage:
2@8mA@2A,3@40mA@4A V

IN STOCK: 42,150

Can Ship immediately

Minimum Order Quantity: 75

Multiple: 75

Factory Lead-Time 29 Weeks

Price (USD)

Qty
Unit Price
75
$0.6494
300
$0.5647
1,050
$0.4713
2,550
$0.4170
5,025
$0.4160
7,500
$0.4105
10,050
$0.4040
15,000 +
$0.4029
Supplier's Standard Package
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