NTGD4167CT1G by onsemi
onsemi Authorized Reseller

NTGD4167CT1G

A complementary Power MOSFET featuring both an N-Channel and a P-Channel device with a 30V drain-source voltage rating in a dual TSOP-6 package. ...

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RoHS Compliant
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DESCRIPTION

The NTGD4167CT1G is a complementary Power MOSFET that integrates both an N-Channel and a P-Channel transistor into a single, compact 3x3 mm TSOP-6 package. The N-Channel component features a maximum on-resistance (RDS(on)) of 90 mΩ at a 4.5V gate voltage, while the P-Channel offers an RDS(on) of 170 mΩ at -4.5V. This device utilizes leading-edge trench technology for low on-resistance and has reduced gate charge to improve switching response. With independently connected devices, it provides significant design flexibility for applications such as DC-DC conversion circuits and load/power switching with level shifting.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
NTGD4167CT1G
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
TW
ECCN:
EAR99
Supplier's Standard Package: The item count, length, weight, or volume contained in the supplier’s original packaging for efficient storage, handling, and distribution.
3000

IN STOCK: 1,183

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Buy all 1,183 in-stock or the regular minimum order quantity of 3000

On Order: 6,000   can ship 5/12/27 

Stock lot only: 1183

Minimum Order Quantity: 3000

Multiple: 3000

Factory Lead-Time 45 Weeks

Price (USD)

Qty
Unit Price
1
$0.2929
3,000
$0.2663
6,000
$0.2656
9,000
$0.2649
12,000
$0.2643
27,000
$0.2636
51,000
$0.2630
102,000 +
$0.2622
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