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OPS667 by optek technology/tt electronics
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OPS667

Optek Technology/TT Electronics

The OPS667 is a matched pair consisting of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor in a T-1 package. ...

Datasheet
RoHS Compliant
BAG Packaging
Accessories
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DESCRIPTION

The OPS667 is a sensor pair comprising a gallium arsenide infrared emitting diode and a corresponding NPN silicon phototransistor. This device features a minimum on-state collector current of 5.0 mA with a 20 mA forward current. Key electrical characteristics include a collector-emitter breakdown voltage of at least 30 V, a maximum collector-emitter dark current of 100 nA, and a collector-emitter saturation voltage of 0.4 V. Designed for reliability, it operates over a temperature range of -40°C to +100°C. The OPS667 is well-suited for applications such as non-contact reflective object sensing, assembly line automation, machine safety, and end-of-travel sensors.

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SPECIFICATIONS

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Products found: 0
Supplier:
Optek Technology/TT Electronics
Part No:
OPS667
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541499500
COO:
MX
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
1000
Package Type:
BAG
Half Intensity Angle Degrees:
N/A
Fabrication Technology:
NPN Transistor10335
Family:
OPS667
Lens Shape Type:
Domed10340
Dimension:
5.0810334mm(Max) + 0.76 x 4.19(Max)mm
Cut-Off Filter:
N/A
Material:
Silicon10341
Lens Dimensions:
3.18 mm
Lens Color:
N/A

IN STOCK: 0

MOQ for out of Stock Qty: 1000

Multiple: 1000

Factory Lead-Time 22 Weeks

Price (USD)

Qty
Unit Price
1,000
$3.51
2,000
$2.16
4,000
$1.71
8,000 +
$1.68
Suppliers Standard Package
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