BIDNW30N60H3

Name: BIDNW30N60H3
Brand: Bourns
SKU: 56630890
Price: 49 USD
Availability: OutOfStock

IGBT Discrete 600V - 30A - TO-247N - -55°C to +150°C ...

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RoHS Compliant

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DESCRIPTION

BIDNW30N60H3 is a 600 V, 30 A Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for optimized high-voltage and high-current switching performance. The device employs advanced trench-gate field-stop technology, which provides superior control of dynamic characteristics, resulting in a low collector-emitter saturation voltage (VCE(sat)) of 1.65 V typical at 30 A and 25°C, and reduced switching losses with fast switching response. Key electrical characteristics include a gate-threshold voltage of 4.0–6.5 V, turn-on delay time of 30 ns, and total switching energy of 2.3 mJ, making it well-suited for demanding applications such as switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating systems.

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Supplier:

Bourns

Part No:

BIDNW30N60H3

Unit of Measure:

Per Each

RoHS:

Yes

HTS:

8541290095

COO:

ECCN:

EAR99

Supplier's Standard Package: The item count, length, weight, or volume contained in the supplier’s original packaging for efficient storage, handling, and distribution.