BIDW30N60T by bourns
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Bourns Authorized Distributor

BIDW30N60T

IGBT Discrete 600V - 30A - TO-247 - -55°C to +150°C ...

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RoHS Compliant
TUBE Packaging
Accessories
Certificate of Compliance

DESCRIPTION

BIDW30N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing low collector-emitter saturation voltage (VCE(sat) typ. 1.65 V at 30 A) and reduced switching losses. The device offers a collector-emitter voltage rating of 600 V, continuous collector current of 30 A at 100°C, and total power dissipation of 230 W. With fast switching characteristics including turn-on delay time of 30 ns and turn-off delay time of 67 ns, it is well-suited for switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating applications.

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SPECIFICATIONS

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Products found: 0
Supplier:
Bourns
Part No:
BIDW30N60T
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
CN
ECCN:
EAR99
Supplier's Standard Package: The item count, length, weight, or volume contained in the supplier’s original packaging for efficient storage, handling, and distribution.
600
Package Type:
TUBE

IN STOCK: 2,199

Ships today, if you order in

Minimum Order Quantity: 56

Factory Lead-Time 16 Weeks

Price (USD)

Qty
Unit Price
56
$4.69
100
$2.90
250
$2.67
600
$2.40
1,200
$2.35
3,000
$2.34
5,400
$2.33
7,800 +
$2.32
Supplier's Standard Package
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