MSC050SDA120BCT
Microchip TechnologyDiode - SiC (Silicon Carbide) Schottky - 1200V - 109A - 1.8 V @ 50 A Forward (Vf) (Max)@If - No Recovery Time > 500mA (Io) - TO-247-3 Package.
DESCRIPTION
The MSC050SDA120BCT silicon carbide (SiC) power Schottky barrier diode (SBD) increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. Operating temperature range is from -55°C to 175°
Search Keywords: MSC050SDA120BCT
SPECIFICATIONS
IN STOCK: 0
MOQ for out of Stock Qty: 8
Factory Lead-Time 8 Weeks
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