G3R350MT12D
NavitasN-Channel SiC MOSFET - Vds:1200V - Rds:350ohms - TO-247-3 ...
DESCRIPTION
The GENESIC SEMI part G3R350MT12D is a highly efficient N-Channel SiC MOSFET designed for various power electronic applications. With a maximum voltage rating of 1200V and a low on-resistance (Rds) of 350ohms, this MOSFET is capable of handling high voltage and delivering excellent conductivity, resulting in reduced power losses and improved system efficiency. The TO-247-3 package ensures easy installation and enhanced thermal performance, enabling reliable operation under demanding conditions. Incorporating advanced technology and robust construction, the G3R350MT12D is an ideal choice for high-power applications requiring superior performance and reliability.
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SPECIFICATIONS
IN STOCK: 0
Minimum Order: 5
Factory Lead-Time 26 Weeks
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