FDG1024NZ
onsemiThe FDG1024NZ is a 20 V, 1.2 A dual N-Channel PowerTrench® MOSFET housed in a compact SC70-6 package. ...
DESCRIPTION
The FDG1024NZ is a dual N-Channel logic level enhancement mode field-effect transistor produced using a high-density DMOS process. It features a low on-state resistance, with a maximum rDS(on) of 175 mΩ at a gate-source voltage of 4.5 V. With a very low gate threshold voltage (VGS(th) < 1 V), the device supports low-level gate drive requirements, enabling operation in 1.5 V circuits. Housed in a very small SC70-6 package, this MOSFET is designed for low-voltage applications as an efficient replacement for bipolar digital transistors and small-signal MOSFETs.
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SPECIFICATIONS
IN STOCK: 0
On Order:
54,000
can ship 5/25/26
Minimum Order Quantity: 3000
Multiple: 3000
This product is not in stock and cannot be back-ordered.</br>See alternative below
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