FDN86246
onsemiThe FDN86246 is an N-Channel PowerTrench® MOSFET rated for 150 V, 1.6 A, and a maximum on-resistance of 261 mΩ. ...
DESCRIPTION
The FDN86246 is an N-Channel MOSFET produced using an advanced Power Trench® process optimized for low on-resistance (rDS(on)), switching performance, and ruggedness. It features a maximum rDS(on) of 261 mΩ at a gate voltage of 10 V and a drain current of 1.6 A. This device is rated for a drain-to-source voltage of 150 V and can handle a continuous drain current of 1.6 A. Key characteristics include high power and current handling capability in a surface-mount package, fast switching speed, and RoHS compliance. The FDN86246 is primarily designed for use as a PD switch in power management applications.
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SPECIFICATIONS
IN STOCK: 5,534
Can Ship immediately
Minimum Order Quantity: 50
Factory Lead-Time 15 Weeks
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