FDS6673BZ
The FDS6673BZ is a -30V P-Channel PowerTrench® MOSFET designed for power management and load switching applications. ...
DESCRIPTION
The FDS6673BZ is a P-Channel MOSFET produced using an advanced PowerTrench® process to minimize on-state resistance. It features a drain-to-source voltage of -30V, a continuous drain current of -14.5A, and a low maximum rDS(on) of 7.8mΩ at VGS = -10V. This device has an extended gate-to-source voltage range of ±25V and a high HBM ESD protection level of 6.5kV. With its high power and current handling capability, the FDS6673BZ is well-suited for power management and load switching in applications like notebook computers and portable battery packs.
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SPECIFICATIONS
IN STOCK: 1,085
Ships today, if you order in
On Order:
2,500
can ship 12/30/26
Minimum Order Quantity: 50
Factory Lead-Time 37 Weeks
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