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FQB12P20TM by onsemi
onsemi Authorized Reseller

FQB12P20TM

The FQB12P20TM is a -200V P-Channel enhancement mode MOSFET designed for high-efficiency switching applications. ...

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RoHS Non-Compliant
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DESCRIPTION

The FQB12P20TM is a P-Channel enhancement mode power MOSFET produced using a proprietary planar stripe, DMOS technology. It is characterized by a drain-source voltage of -200V, a continuous drain current of -11.5A, and a low on-state resistance of 0.47Ω at a -10V gate-source voltage. This device offers superior switching performance with a low typical gate charge of 31 nC and a low reverse transfer capacitance of 30 pF. It is 100% avalanche tested and features improved dv/dt capability for robust operation. These characteristics make the FQB12P20TM well-suited for high-efficiency switching DC/DC converters.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
FQB12P20TM
Unit of Measure:
Per Each
RoHS:
No
HTS:
8541290095
COO:
CZ
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
800

IN STOCK: 1,890

Ships today, if you order in

Minimum Order Quantity: 25

Factory Lead-Time 11 Weeks

Price (USD)

Qty
Unit Price
25
$1.590
250
$1.015
800
$0.985
1,600
$0.914
3,200
$0.912
5,600
$0.909
8,000
$0.906
10,400 +
$0.904
Supplier's Standard Package
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