FQB12P20TM by onsemi
onsemi Authorized Reseller

FQB12P20TM

The FQB12P20TM is a -200V P-Channel enhancement mode MOSFET designed for high-efficiency switching applications. ...

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RoHS Non-Compliant
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DESCRIPTION

The FQB12P20TM is a P-Channel enhancement mode power MOSFET produced using a proprietary planar stripe, DMOS technology. It is characterized by a drain-source voltage of -200V, a continuous drain current of -11.5A, and a low on-state resistance of 0.47Ω at a -10V gate-source voltage. This device offers superior switching performance with a low typical gate charge of 31 nC and a low reverse transfer capacitance of 30 pF. It is 100% avalanche tested and features improved dv/dt capability for robust operation. These characteristics make the FQB12P20TM well-suited for high-efficiency switching DC/DC converters.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
FQB12P20TM
Unit of Measure:
Per Each
RoHS:
No
HTS:
8541290095
COO:
CZ
ECCN:
EAR99
Supplier's Standard Package: The item count, length, weight, or volume contained in the supplier’s original packaging for efficient storage, handling, and distribution.
800

IN STOCK: 590

Ships today, if you order in

Manufacturer Stock: 2   can ship 11/16/26

On Order: 1,600   can ship 12/30/26 

Minimum Order Quantity: 250

Factory Lead-Time 10 Weeks can ship 1/11/27  

Price (USD)

Qty
Unit Price
250
$1.233
800
$1.005
1,600
$1.002
3,200
$1.000
5,600
$0.997
8,000
$0.995
10,400
$0.992
15,200 +
$0.990
Supplier's Standard Package
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