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H11G2SR2M by onsemi

H11G2SR2M

onsemi

The H11G2SR2M is a high-voltage, photodarlington-type optically coupled optocoupler designed for electrical isolation and high sensitivity. ...

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DESCRIPTION

The H11G2SR2M is a photodarlington-type optocoupler, which integrates a gallium arsenide infrared emitting diode with a silicon darlington phototransistor. It features a high collector-emitter breakdown voltage of at least 80V and offers high sensitivity with a minimum current transfer ratio (CTR) of 500% at a low input current of 1mA. This device maintains low leakage current, not exceeding 100µA at 60V and an elevated temperature of 80°C, and has a maximum saturation voltage of 1.0V. It is well-suited for applications such as CMOS logic interfacing, telephone ring detection, low input TTL interfacing, and power supply isolation.

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SPECIFICATIONS

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Supplier:
onsemi
Part No:
H11G2SR2M
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541498000
COO:
TH
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
1000

IN STOCK: 0

On Order: 6,000   can ship 7/10/26 

Minimum Order Quantity: 50

Factory Lead-Time 17 Weeks

Price (USD)

Qty
Unit Price
50
$0.6357
500
$0.3338
1,000
$0.3272
3,000
$0.3165
5,000
$0.3115
8,000
$0.3106
10,000
$0.3099
15,000 +
$0.3091
Suppliers Standard Package
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