MMBT5088LT1G
onsemiThe MMBT5088LT1G is an NPN silicon transistor designed for low-noise amplification applications. ...
DESCRIPTION
The MMBT5088LT1G is an NPN silicon low noise transistor supplied in a SOT-23 package. It features a collector-emitter breakdown voltage of 30 Vdc and a continuous collector current rating of 50 mAdc. Key performance characteristics include a DC current gain (hFE) between 300 and 900 at 100 µA, a minimum current-gain-bandwidth product of 50 MHz, and a maximum noise figure of 3.0 dB. This Pb-free and RoHS-compliant device is well-suited for use in audio preamplifiers and other sensitive signal processing circuits where low noise is a critical requirement.
Search Keywords: MMBT5088LT1G
SPECIFICATIONS
IN STOCK: 15,000
Can Ship immediately
On Order:
90,000
can ship 10/7/26
Minimum Order Quantity: 3000
Multiple: 3000
Factory Lead-Time 42 Weeks
Price (USD)
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