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NDS0605 by onsemi

NDS0605

onsemi

The NDS0605 is a P-Channel enhancement mode field effect transistor designed for use as a voltage-controlled small signal switch. ...

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DESCRIPTION

The NDS0605 is a P-Channel enhancement mode field effect transistor produced using a high cell density DMOS technology for fast switching and low on-state resistance. It features a drain-source voltage of -60V, a continuous drain current of -0.18A, and a typical on-state resistance (RDS(ON)) of 5 Ω at a gate-source voltage of -10V. The transistor operates over a wide temperature range from -55°C to +150°C and is housed in a compact SOT-23 package. This device is particularly suited for low voltage applications that require a low current, high-side switch, capable of delivering pulsed currents up to -1A.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
NDS0605
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541210095
COO:
KR
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000

IN STOCK: 69,000

Can Ship immediately

Minimum Order Quantity: 3000

Multiple: 3000

Factory Lead-Time 21 Weeks

Price (USD)

Qty
Unit Price
3,000
$0.0708
6,000
$0.0637
9,000
$0.0595
12,000
$0.0560
27,000
$0.0520
51,000
$0.0484
102,000
$0.0459
150,000 +
$0.0428
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