NTGD4167CT1G
onsemiA complementary Power MOSFET featuring both an N-Channel and a P-Channel device with a 30V drain-source voltage rating in a dual TSOP-6 package. ...
DESCRIPTION
The NTGD4167CT1G is a complementary Power MOSFET that integrates both an N-Channel and a P-Channel transistor into a single, compact 3x3 mm TSOP-6 package. The N-Channel component features a maximum on-resistance (RDS(on)) of 90 mΩ at a 4.5V gate voltage, while the P-Channel offers an RDS(on) of 170 mΩ at -4.5V. This device utilizes leading-edge trench technology for low on-resistance and has reduced gate charge to improve switching response. With independently connected devices, it provides significant design flexibility for applications such as DC-DC conversion circuits and load/power switching with level shifting.
Search Keywords: NTGD4167CT1G
SPECIFICATIONS
IN STOCK: 8,683
Can Ship immediately
Minimum Order Quantity: 250
Factory Lead-Time 18 Weeks
Price (USD)
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