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NTGD4167CT1G by onsemi

NTGD4167CT1G

onsemi

A complementary Power MOSFET featuring both an N-Channel and a P-Channel device with a 30V drain-source voltage rating in a dual TSOP-6 package. ...

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RoHS Compliant
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DESCRIPTION

The NTGD4167CT1G is a complementary Power MOSFET that integrates both an N-Channel and a P-Channel transistor into a single, compact 3x3 mm TSOP-6 package. The N-Channel component features a maximum on-resistance (RDS(on)) of 90 mΩ at a 4.5V gate voltage, while the P-Channel offers an RDS(on) of 170 mΩ at -4.5V. This device utilizes leading-edge trench technology for low on-resistance and has reduced gate charge to improve switching response. With independently connected devices, it provides significant design flexibility for applications such as DC-DC conversion circuits and load/power switching with level shifting.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
NTGD4167CT1G
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
TW
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000

IN STOCK: 7,183

Can Ship immediately

Minimum Order Quantity: 250

Factory Lead-Time 18 Weeks

Price (USD)

Qty
Unit Price
250
$0.1900
1,000
$0.1744
3,000
$0.1720
6,000
$0.1675
9,000
$0.1612
27,000
$0.1572
51,000
$0.1552
102,000 +
$0.1534
Suppliers Standard Package
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