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NTJD5121NT1G by onsemi
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NTJD5121NT1G

onsemi

A dual N-Channel power MOSFET with ESD protection, rated for 60 V and 295 mA in a SC-88 package. ...

Datasheet
RoHS Compliant
Packaging
Accessories
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DESCRIPTION

The NTJD5121NT1G is a dual N-Channel power MOSFET featuring integrated ESD protection in a compact SC-88 surface-mount package. This device is characterized by a drain-to-source voltage of 60 V and a continuous drain current of 295 mA at an ambient temperature of 25°C. It offers low on-resistance, with a maximum RDS(on) of 1.6 Ω at a 10 V gate-source voltage and 2.5 Ω at 4.5 V. Key features include a low gate threshold voltage, low input capacitance, and a gate-source ESD rating of 2000 V (HBM). These characteristics make the NTJD5121NT1G suitable for applications such as low-side load switches and DC-DC converters.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
NTJD5121NT1G
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
TW
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000

IN STOCK: 162,000

Can Ship immediately

Minimum Order Quantity: 3000

Multiple: 3000

Factory Lead-Time 42 Weeks

Price (USD)

Qty
Unit Price
3,000
$0.0396
6,000
$0.0380
12,000
$0.0375
27,000
$0.0365
51,000
$0.0351
102,000
$0.0342
150,000
$0.0341
252,000 +
$0.0338
Suppliers Standard Package
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