NTJD5121NT1G by onsemi
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NTJD5121NT1G

A dual N-Channel power MOSFET with ESD protection, rated for 60 V and 295 mA in a SC-88 package. ...

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DESCRIPTION

The NTJD5121NT1G is a dual N-Channel power MOSFET featuring integrated ESD protection in a compact SC-88 surface-mount package. This device is characterized by a drain-to-source voltage of 60 V and a continuous drain current of 295 mA at an ambient temperature of 25°C. It offers low on-resistance, with a maximum RDS(on) of 1.6 Ω at a 10 V gate-source voltage and 2.5 Ω at 4.5 V. Key features include a low gate threshold voltage, low input capacitance, and a gate-source ESD rating of 2000 V (HBM). These characteristics make the NTJD5121NT1G suitable for applications such as low-side load switches and DC-DC converters.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
NTJD5121NT1G
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
TW
ECCN:
EAR99
Supplier's Standard Package: The item count, length, weight, or volume contained in the supplier’s original packaging for efficient storage, handling, and distribution.
3000

IN STOCK: 150,000

Ships today, if you order in

On Order: 60,000   can ship 3/8/28 

Minimum Order Quantity: 3000

Multiple: 3000

Factory Lead-Time 73 Weeks

Price (USD)

Qty
Unit Price
3,000
$0.0656
6,000
$0.0579
12,000
$0.0573
27,000
$0.0572
51,000
$0.0570
102,000
$0.0569
150,000
$0.0567
252,000 +
$0.0565
Supplier's Standard Package
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