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FDV303N by onsemi
onsemi Authorized Reseller

FDV303N

The FDV303N is an N-Channel enhancement mode digital FET designed for low voltage and battery-powered applications. ...

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RoHS Compliant
REEL Packaging
Accessories
Certificate of Compliance

DESCRIPTION

The FDV303N is an N-Channel enhancement mode field-effect transistor produced using a high cell density DMOS process to minimize on-state resistance at low gate drive conditions. It features a drain-source voltage of 25V and a continuous drain current of 0.68A. The device exhibits a low on-state resistance (RDS(ON)) of 0.45 Ω at a 4.5V gate voltage and has a gate threshold voltage below 1V, allowing direct operation in 3V circuits. Due to its low gate drive requirements and high efficiency, it is ideal for applications in battery circuits, inverters, and miniature DC/DC converters in portable electronics like cellular phones.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
FDV303N
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541210095
COO:
KR
ECCN:
EAR99
Reel Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000
Package Type:
REEL

IN STOCK: 165,000

Can Ship immediately

Minimum Order Quantity: 3000

Multiple: 3000

Factory Lead-Time 18 Weeks

Price (USD)

Qty
Unit Price
3,000
$0.0625
6,000
$0.0619
12,000
$0.0613
27,000
$0.0612
51,000
$0.0610
102,000
$0.0609
150,000
$0.0607
252,000 +
$0.0606
Reel Package
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