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MMBT3906LT1G by onsemi
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MMBT3906LT1G

onsemi

The MMBT3906LT1G is a general-purpose PNP silicon transistor for switching and amplification applications. ...

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DESCRIPTION

The MMBT3906LT1G is a general-purpose PNP silicon transistor housed in a SOT-23 package. This device features a collector-emitter voltage of -40 Vdc and a continuous collector current of -200 mAdc. Key performance characteristics include a DC current gain (hFE) between 100 and 300 at a collector current of -10 mA, and a minimum current-gain-bandwidth product of 250 MHz. The transistor has a total device dissipation of 225 mW and operates over a junction temperature range of -55°C to +150°C, making it suitable for a wide variety of general-purpose switching and linear amplification circuits.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
MMBT3906LT1G
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541210095
COO:
MY
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000
Maximum Collector Base Voltage:
40 V
Family:
MMBT3906L
Dimension:
2.9 x 1.3 x 0.94 mm

IN STOCK: 270,000

Ships today, if you order in

On Order: 510,000   can ship 7/22/26 

Minimum Order Quantity: 3000

Multiple: 3000

Factory Lead-Time 42 Weeks

Price (USD)

Qty
Unit Price
3,000
$0.0220
9,000
$0.0106
27,000
$0.0103
51,000
$0.0100
102,000
$0.0096
150,000
$0.0094
252,000
$0.0094
501,000 +
$0.0093

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