MMBT3906LT1G by onsemi
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MMBT3906LT1G

The MMBT3906LT1G is a general-purpose PNP silicon transistor for switching and amplification applications. ...

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RoHS Compliant
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Certificate of Compliance

DESCRIPTION

The MMBT3906LT1G is a general-purpose PNP silicon transistor housed in a SOT-23 package. This device features a collector-emitter voltage of -40 Vdc and a continuous collector current of -200 mAdc. Key performance characteristics include a DC current gain (hFE) between 100 and 300 at a collector current of -10 mA, and a minimum current-gain-bandwidth product of 250 MHz. The transistor has a total device dissipation of 225 mW and operates over a junction temperature range of -55°C to +150°C, making it suitable for a wide variety of general-purpose switching and linear amplification circuits.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
MMBT3906LT1G
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541210095
COO:
MY
ECCN:
EAR99
Supplier's Standard Package: The item count, length, weight, or volume contained in the supplier’s original packaging for efficient storage, handling, and distribution.
3000
Maximum Collector Base Voltage:
40 V
Family:
MMBT3906L
Dimension:
2.9 x 1.3 x 0.94 mm

IN STOCK: 777,000

Ships today, if you order in

Minimum Order Quantity: 3000

Multiple: 3000

Factory Lead-Time 45 Weeks

Price (USD)

Qty
Unit Price
3,000
$0.0157
12,000
$0.0144
27,000
$0.0142
51,000
$0.0138
102,000
$0.0133
252,000
$0.0130
501,000 +
$0.0128
Supplier's Standard Package
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