NDT452AP by onsemi
onsemi Authorized Reseller

NDT452AP

The NDT452AP is a P-Channel enhancement mode power field-effect transistor rated for -30V drain-source voltage and -5A continuous drain current. ...

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RoHS Non-Compliant
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DESCRIPTION

The NDT452AP is a P-Channel enhancement mode power field-effect transistor produced using a high cell density DMOS technology to minimize on-state resistance and provide superior switching performance. It features a drain-source voltage (VDSS) of -30V, a continuous drain current (ID) of -5A, and a low on-state resistance (RDS(ON)) of 0.065 Ω at a gate-source voltage of -10V. The device can handle pulsed drain currents up to -15A and operates over a wide temperature range of -65°C to 150°C. Housed in a SOT-223 surface-mount package, this transistor is particularly suited for low-voltage applications such as notebook computer power management and DC motor control.

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SPECIFICATIONS

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Supplier:
onsemi
Part No:
NDT452AP
Unit of Measure:
Per Each
RoHS:
No
HTS:
8541210095
COO:
KR
ECCN:
EAR99
Supplier's Standard Package: The item count, length, weight, or volume contained in the supplier’s original packaging for efficient storage, handling, and distribution.
4000

IN STOCK: 9,649

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Minimum Order Quantity: 1000

Factory Lead-Time 18 Weeks

Price (USD)

Qty
Unit Price
1,000
$0.5069
4,000
$0.4040
8,000
$0.4029
12,000
$0.4019
16,000
$0.4010
28,000
$0.3999
52,000 +
$0.3989
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