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H11G2M by onsemi
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H11G2M

The H11G2M is a photodarlington-type optically coupled optocoupler in a 6-pin DIP package, designed for high voltage isolation. ...

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RoHS Compliant
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Certificate of Compliance

DESCRIPTION

The H11G2M is a photodarlington-type optocoupler that integrates a gallium arsenide infrared emitting diode with a silicon darlington phototransistor. This device features a high collector-emitter breakdown voltage of at least 80 V and exhibits high sensitivity with a minimum current transfer ratio (CTR) of 500% at a low input current of 1 mA. It provides high electrical isolation rated at 4,170 VACRMS for one minute and maintains low leakage current at elevated temperatures. The H11G2M is ideal for applications requiring power supply isolation, telephone ring detection, and interfacing with CMOS or low-input TTL logic.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
H11G2M
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541498000
COO:
TH
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
1000

IN STOCK: 1,345

Can Ship immediately

Minimum Order Quantity: 100

Factory Lead-Time 16 Weeks

Price (USD)

Qty
Unit Price
100
$0.5044
500
$0.4202
1,000
$0.3293
3,000
$0.2914
5,000
$0.2907
8,000
$0.2869
15,000
$0.2823
25,000 +
$0.2816
Supplier's Standard Package
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