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NDS331N by onsemi
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NDS331N

The NDS331N is an N-Channel logic level enhancement mode Field Effect Transistor (FET) featuring a 20V drain-source voltage and 1.3A continuous drain current. ...

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RoHS Compliant
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Certificate of Compliance

DESCRIPTION

The NDS331N is an N-Channel logic level enhancement mode power FET designed with high-density DMOS technology to minimize on-state resistance. It operates with a drain-source voltage of 20V, a continuous gate-source voltage of 8V, and handles a continuous drain current of 1.3A. Key features include a low on-state resistance (RDS(ON)) of 0.16 Ω at VGS=4.5V and 0.21 Ω at VGS=2.7V. Housed in a SOT-23 surface-mount package, this transistor is ideal for low-voltage applications such as notebook computers, portable phones, and other battery-powered circuits requiring fast switching and low power loss.

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SPECIFICATIONS

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Products found: 0
Supplier:
onsemi
Part No:
NDS331N
Unit of Measure:
Per Each
RoHS:
Yes
HTS:
8541210095
COO:
KR
ECCN:
EAR99
Supplier Standard Pack: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000

IN STOCK: 75,422

Can Ship immediately

Minimum Order Quantity: 3000

Multiple: 3000

Factory Lead-Time 16 Weeks

Price (USD)

Qty
Unit Price
3,000
$0.1372
6,000
$0.1336
9,000
$0.1302
12,000
$0.1285
27,000
$0.1254
51,000
$0.1238
102,000
$0.1224
150,000 +
$0.1221

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