NDS331N
The NDS331N is an N-Channel logic level enhancement mode Field Effect Transistor (FET) featuring a 20V drain-source voltage and 1.3A continuous drain current. ...
DESCRIPTION
The NDS331N is an N-Channel logic level enhancement mode power FET designed with high-density DMOS technology to minimize on-state resistance. It operates with a drain-source voltage of 20V, a continuous gate-source voltage of 8V, and handles a continuous drain current of 1.3A. Key features include a low on-state resistance (RDS(ON)) of 0.16 Ω at VGS=4.5V and 0.21 Ω at VGS=2.7V. Housed in a SOT-23 surface-mount package, this transistor is ideal for low-voltage applications such as notebook computers, portable phones, and other battery-powered circuits requiring fast switching and low power loss.
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SPECIFICATIONS
IN STOCK: 75,422
Can Ship immediately
Minimum Order Quantity: 3000
Multiple: 3000
Factory Lead-Time 16 Weeks
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