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BIDNW30N60H3

Bourns

IGBT Discrete 600V - 30A - TO-247N - -55°C to +150°C ...

Fiche technique

RoHS Compliant

TUBE Emballage

DESCRIPTION

BIDNW30N60H3 is a 600 V, 30 A Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for optimized high-voltage and high-current switching performance. The device employs advanced trench-gate field-stop technology, which provides superior control of dynamic characteristics, resulting in a low collector-emitter saturation voltage (VCE(sat)) of 1.65 V typical at 30 A and 25°C, and reduced switching losses with fast switching response. Key electrical characteristics include a gate-threshold voltage of 4.0–6.5 V, turn-on delay time of 30 ns, and total switching energy of 2.3 mJ, making it well-suited for demanding applications such as switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating systems.

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SPÉCIFICATION

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fournisseur:

Bourns

Référence:

BIDNW30N60H3

Unité de mesure:

Per Each

RoHS:

Yes

HTS:

8541290095

COO:

ECCN:

EAR99

Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.