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BIDNW30N60H3
IGBT Discrete 600V - 30A - TO-247N - -55°C to +150°C ...
DESCRIPTION
BIDNW30N60H3 is a 600 V, 30 A Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for optimized high-voltage and high-current switching performance. The device employs advanced trench-gate field-stop technology, which provides superior control of dynamic characteristics, resulting in a low collector-emitter saturation voltage (VCE(sat)) of 1.65 V typical at 30 A and 25°C, and reduced switching losses with fast switching response. Key electrical characteristics include a gate-threshold voltage of 4.0–6.5 V, turn-on delay time of 30 ns, and total switching energy of 2.3 mJ, making it well-suited for demanding applications such as switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and induction heating systems.
Mots-clés de recherche: BIDNW30N60H3
SPÉCIFICATIONS
EN STOCK: 1 338
Peut être expédié immédiatement
Quantité minimale de commande pour qté en stock: 10
Quantité minimale de commande pour qté en rupture de stock: 750
DÉLAI DE L'USINE 16 Semaines
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