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APT50GN60BDQ3G by microchip technology

APT50GN60BDQ3G

Microchip Technology

The APT50GN60BDQ3G is a 600V Field Stop Trench Gate IGBT designed for low-frequency applications requiring minimal conduction loss. ...

Fiche technique
RoHS Compliant
TUBE Emballage
ACCESSOIRES
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DESCRIPTION

The APT50GN60BDQ3G is a 600V Insulated Gate Bipolar Transistor (IGBT) that utilizes advanced Field Stop and Trench Gate technologies for ultra-low VCE(ON). It features a continuous collector current of 107A at 25°C, a total power dissipation of 366W, and is rated for a maximum junction temperature of 175°C. The device offers a 6µs short circuit capability, while low gate charge and tight parameter distribution simplify gate drive design and enable easy paralleling. Its characteristics make it ideal for low-frequency power applications such as welding, inductive heating, solar inverters, motor drives, and uninterruptible power supplies (UPS).

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SPÉCIFICATION

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fournisseur:
Microchip Technology
Référence:
APT50GN60BDQ3G
Unité de mesure:
Par Each
RoHS:
Yes
HTS:
8541290095
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
1
Package Type:
TUBE
Dissipation de puissance maximale:
366000 mW
Courant de collecteur continu maximal:
107 A
Dimension:
16.266976mm(Max) x 5.31(Max) x 21.46(Max)mm
Tension grille-émetteur maximale:
±30 V
Famille:
APT50GN60BDQ3
Type de canal:
N6974
Configuration:
Single6975
Tension collecteur-émetteur maximale:
600 V
Courant de fuite grille-émetteur maximal:
0.6 uA

EN STOCK: 0

Commande min Quantitè: 5

DÉLAI DE L'USINE 26 Weeks

Prix (USD)

QTÉ
Prix unitaire
5
$10.58
25
$9.58
50
$9.32
100
$9.08
250
$8.74
500
$8.72
1 000 +
$8.64
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