BD679AS
The BD679AS is an NPN epitaxial silicon Darlington transistor designed for medium power linear and switching applications. ...
DESCRIPTION
The BD679AS is a medium power NPN Darlington transistor in a TO-126 package. It features a collector-emitter voltage of 80V and a continuous collector current rating of 4A, with a peak capability of 6A. This device offers a high DC current gain of at least 750 and a total power dissipation of 40W at a 25°C case temperature. Its characteristics make it suitable for a variety of medium power linear and switching applications, such as amplifier stages and power control circuits.
Mots-clés de recherche: BD679AS
SPÉCIFICATIONS
EN STOCK: 7 400
Peut être expédié immédiatement
Stock du fabricant: 10 000 Peut expédier 8/14/26
Quantité minimale de commande: 100
DÉLAI DE L'USINE 14 Semaines Peut expédier 11/5/26
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