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FDN358P by onsemi

FDN358P

onsemi

The FDN358P is a single P-channel, logic level PowerTrench® MOSFET designed for low on-state resistance and superior switching performance. ...

RoHS Compliant
Emballage
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DESCRIPTION

The FDN358P is a single P-channel, logic level MOSFET produced using an advanced PowerTrench process. It features a drain-source voltage of -30V and a continuous drain current of -1.5A. This device is tailored to minimize on-state resistance, with an RDS(ON) of 125 mΩ at a gate-source voltage of -10V and 200 mΩ at -4.5V. It also maintains a low typical gate charge of 4 nC for superior switching performance, all within a SuperSOT-3 package. The FDN358P is well-suited for portable electronics applications such as load switching, power management, battery charging circuits, and DC/DC conversion.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
FDN358P
Unité de mesure:
Per Each
RoHS:
Yes
HTS:
8541210095
COO:
KR
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000

EN STOCK: 22,650

Peut être expédié immédiatement

Commande min Quantitè: 250

DÉLAI DE L'USINE 15 Weeks

PRICE (USD)

QTÉ
Prix unitaire
250
$0.1697
1 000
$0.1557
3 000
$0.1537
6 000
$0.1497
9 000
$0.1457
27 000
$0.1404
51 000
$0.1386
102 000 +
$0.1370

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