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FDT86113LZ by onsemi

FDT86113LZ

onsemi

The FDT86113LZ is an N-Channel PowerTrench® MOSFET rated for 100V drain-to-source voltage and 3.3A continuous drain current. ...

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DESCRIPTION

The FDT86113LZ is an N-Channel logic-level MOSFET produced using an advanced PowerTrench® process to minimize on-state resistance while maintaining superior switching performance. This device features a maximum on-resistance (rDS(on)) of 100 mΩ at a VGS of 10V and is rated for a drain-to-source voltage of 100V with a continuous drain current of 3.3A. It incorporates a Gate-to-Source zener diode for enhanced ESD protection and is 100% UIL tested. Housed in a surface-mount SOT-223 package, this MOSFET is optimized for high power and current handling, making it ideal for DC-DC switching applications.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
FDT86113LZ
Unité de mesure:
Per Each
RoHS:
No
HTS:
8541290095
COO:
KR
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
4000

EN STOCK: 14,945

Peut être expédié immédiatement

sur commande: 16 000   Peut expédier 12/20/27 

Commande min Quantitè: 50

DÉLAI DE L'USINE 79 Weeks

PRICE (USD)

QTÉ
Prix unitaire
50
$0.8910
500
$0.5486
1 000
$0.4798
4 000
$0.3935
8 000
$0.3668
12 000
$0.3659
16 000
$0.3649
28 000 +
$0.3640
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