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MJD112-1G by onsemi
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MJD112-1G

onsemi

The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications. ...

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DESCRIPTION

The MJD112-1G is an NPN silicon Darlington power transistor intended for general-purpose power and switching tasks. This device is rated for a collector-emitter voltage of 100 V and a continuous collector current of 2 A, with a peak current rating of 4 A. It features a high DC current gain and can dissipate up to 20 W at a case temperature of 25°C. Housed in a DPAK-3 package with straight leads, it is suitable for use as an output or driver stage in applications such as switching regulators, converters, and power amplifiers.

Search Keywords: MJD1121G

SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
MJD112-1G
Unité de mesure:
Per Each
RoHS:
No
HTS:
8541290095
COO:
MY
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
75
Dimension:
6.73(Max) x 2.38(Max) x 6.35(Max) mm
Family:
MJD112
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4@40mA@4A V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Saturation Voltage:
2@8mA@2A,3@40mA@4A V

EN STOCK: 43,200

Peut être expédié immédiatement

Commande min Quantitè: 75

Multiple: 75

DÉLAI DE L'USINE 29 Weeks

PRICE (USD)

QTÉ
Prix unitaire
75
$0.3811
300
$0.3730
1 050
$0.3631
2 550
$0.3543
5 025
$0.3523
7 500
$0.3513
10 050
$0.3482
15 000 +
$0.3474

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