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MMBT3906LT1G by onsemi
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MMBT3906LT1G

onsemi

The MMBT3906LT1G is a general-purpose PNP silicon transistor for switching and amplification applications. ...

RoHS Compliant
Emballage
ACCESSOIRES
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DESCRIPTION

The MMBT3906LT1G is a general-purpose PNP silicon transistor housed in a SOT-23 package. This device features a collector-emitter voltage of -40 Vdc and a continuous collector current of -200 mAdc. Key performance characteristics include a DC current gain (hFE) between 100 and 300 at a collector current of -10 mA, and a minimum current-gain-bandwidth product of 250 MHz. The transistor has a total device dissipation of 225 mW and operates over a junction temperature range of -55°C to +150°C, making it suitable for a wide variety of general-purpose switching and linear amplification circuits.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
MMBT3906LT1G
Unité de mesure:
Per Each
RoHS:
Yes
HTS:
8541210095
COO:
MY
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000
Maximum Collector Base Voltage:
40 V
Family:
MMBT3906L
Dimension:
2.9 x 1.3 x 0.94 mm

EN STOCK: 267,000

Peut être expédié immédiatement

sur commande: 510 000   Peut expédier 7/10/26 

Commande min Quantitè: 3000

Multiple: 3000

DÉLAI DE L'USINE 42 Weeks

PRICE (USD)

QTÉ
Prix unitaire
3 000
$0.0313
12 000
$0.0287
27 000
$0.0284
51 000
$0.0276
102 000
$0.0266
252 000
$0.0260
501 000 +
$0.0256

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