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DESCRIPTION
The ONSEMI MMBT5089LT1G is a high-performance NPN bipolar junction transistor (BJT) renowned for its excellent gain characteristics and robust performance in a compact package. Ideal for a wide range of electronic applications, this transistor is designed to amplify or switch electronic signals with efficiency and reliability. It features a maximum collector current of 100mA and a collector-emitter voltage of 30V, making it suitable for a variety of low to medium current and voltage applications. The MMBT5089LT1G is housed in a space-saving SOT-23 package, which makes it perfect for modern electronic designs that require efficient use of board space. It is widely used in amplification circuits, switching applications, and in the creation of oscillators and multivibrators. With ONSEMI's commitment to quality and performance, this transistor ensures consistent results across different use cases.
Search Keywords: MMBT5089LT1G
SPÉCIFICATION
EN STOCK: 639,000
Peut être expédié immédiatement
Commande min Quantitè: 3000
Multiple: 3000
DÉLAI DE L'USINE 41 Weeks
Fiche technique
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