NCD57000DWR2G
onsemiIsolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation.
RoHS Compliant
Certificate of Compliance Guarantee
DESCRIPTION
Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation.
Search Keywords: NCD57000DWR2G
SPÉCIFICATION
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Products found: 0
fournisseur:
onsemi
Référence:
NCD57000DWR2G
Unité de mesure:
Per Each
RoHS:
Yes
HTS:
8542390070
COO:
US
ECCN:
EAR99
Référence:
1000
EN STOCK: 0
Quantité minimale de commande pour qté en rupture de stock: 250
DÉLAI DE L'USINE 21 Weeks
PRICE (USD)
QTÉ
Prix unitaire
250
$9.83
500
$5.20
750
$3.66
1 000
+
$3.58
English
French
