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NDS0605 by onsemi

NDS0605

onsemi

The NDS0605 is a P-Channel enhancement mode field effect transistor designed for use as a voltage-controlled small signal switch. ...

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RoHS Compliant
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DESCRIPTION

The NDS0605 is a P-Channel enhancement mode field effect transistor produced using a high cell density DMOS technology for fast switching and low on-state resistance. It features a drain-source voltage of -60V, a continuous drain current of -0.18A, and a typical on-state resistance (RDS(ON)) of 5 Ω at a gate-source voltage of -10V. The transistor operates over a wide temperature range from -55°C to +150°C and is housed in a compact SOT-23 package. This device is particularly suited for low voltage applications that require a low current, high-side switch, capable of delivering pulsed currents up to -1A.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
NDS0605
Unité de mesure:
Per Each
RoHS:
Yes
HTS:
8541210095
COO:
KR
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000

EN STOCK: 69,000

Peut être expédié immédiatement

Commande min Quantitè: 3000

Multiple: 3000

DÉLAI DE L'USINE 21 Weeks

PRICE (USD)

QTÉ
Prix unitaire
3 000
$0.0634
6 000
$0.0628
9 000
$0.0607
12 000
$0.0604
27 000
$0.0599
51 000
$0.0584
102 000
$0.0571
150 000 +
$0.0570
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