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NDT456P by onsemi

NDT456P

onsemi

The NDT456P is a -30V, -7.5A P-Channel enhancement mode field effect transistor designed for power management and switching applications. ...

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DESCRIPTION

The NDT456P is a P-Channel enhancement mode power field effect transistor produced using a high cell density DMOS technology for superior switching performance. It is rated for a drain-source voltage of -30V and a continuous drain current of -7.5A. This device features a very low on-state resistance, with an RDS(ON) of 0.030 Ω at VGS = -10V and 0.045 Ω at VGS = -4.5V. Housed in a surface-mount SOT-223 package, it offers high power and current handling capabilities. The NDT456P is particularly suited for low voltage applications such as notebook computer power management, battery-powered circuits, and DC motor control.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
NDT456P
Unité de mesure:
Per Each
RoHS:
No
HTS:
8541290095
COO:
PH
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
4000

EN STOCK: 1,000

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Commande min Quantitè: 50

DÉLAI DE L'USINE 11 Weeks

PRICE (USD)

QTÉ
Prix unitaire
50
$0.967
250
$0.778
500
$0.676
1 000
$0.619
4 000
$0.600
8 000
$0.599
12 000
$0.597
16 000 +
$0.596
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