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NTGD4167CT1G by onsemi

NTGD4167CT1G

onsemi

A complementary Power MOSFET featuring both an N-Channel and a P-Channel device with a 30V drain-source voltage rating in a dual TSOP-6 package. ...

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RoHS Compliant
Emballage
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DESCRIPTION

The NTGD4167CT1G is a complementary Power MOSFET that integrates both an N-Channel and a P-Channel transistor into a single, compact 3x3 mm TSOP-6 package. The N-Channel component features a maximum on-resistance (RDS(on)) of 90 mΩ at a 4.5V gate voltage, while the P-Channel offers an RDS(on) of 170 mΩ at -4.5V. This device utilizes leading-edge trench technology for low on-resistance and has reduced gate charge to improve switching response. With independently connected devices, it provides significant design flexibility for applications such as DC-DC conversion circuits and load/power switching with level shifting.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
NTGD4167CT1G
Unité de mesure:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
TW
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000

EN STOCK: 7,183

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Commande min Quantitè: 250

DÉLAI DE L'USINE 18 Weeks

PRICE (USD)

QTÉ
Prix unitaire
250
$0.3300
1 000
$0.2532
3 000
$0.2343
6 000
$0.2158
9 000
$0.2153
27 000
$0.2148
51 000
$0.2141
102 000 +
$0.2136
Emballage standard du fournisseur
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