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NTJD1155LT1G
The NTJD1155LT1G is an integrated P-Channel and N-Channel MOSFET configured as a high-side load switch with a level-shift function in an SC-88 package. ...
DESCRIPTION
The NTJD1155LT1G integrates a P-Channel and N-Channel MOSFET into a single SC-88 package, designed to function as a high-side load switch. The P-Channel MOSFET is a low RDS(on) load switch, while the N-Channel MOSFET with internal ESD protection functions as a level-shifter. This device operates on supply lines from 1.8 V to 8.0 V and can be controlled by logic signals from 1.5 V to 8.0 V. It is capable of driving continuous load currents up to ±1.3 A. Due to its small footprint and low-voltage control, the NTJD1155LT1G is particularly suited for power management in portable electronic equipment.
Mots-clés de recherche: NTJD1155LT1G
SPÉCIFICATIONS
EN STOCK: 60 000
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DÉLAI DE L'USINE 30 Semaines
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