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NTJD5121NT1G by onsemi
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NTJD5121NT1G

onsemi

A dual N-Channel power MOSFET with ESD protection, rated for 60 V and 295 mA in a SC-88 package. ...

Fiche technique
RoHS Compliant
Emballage
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DESCRIPTION

The NTJD5121NT1G is a dual N-Channel power MOSFET featuring integrated ESD protection in a compact SC-88 surface-mount package. This device is characterized by a drain-to-source voltage of 60 V and a continuous drain current of 295 mA at an ambient temperature of 25°C. It offers low on-resistance, with a maximum RDS(on) of 1.6 Ω at a 10 V gate-source voltage and 2.5 Ω at 4.5 V. Key features include a low gate threshold voltage, low input capacitance, and a gate-source ESD rating of 2000 V (HBM). These characteristics make the NTJD5121NT1G suitable for applications such as low-side load switches and DC-DC converters.

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SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
NTJD5121NT1G
Unité de mesure:
Per Each
RoHS:
Yes
HTS:
8541290095
COO:
TW
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
3000

EN STOCK: 162,000

Peut être expédié immédiatement

Commande min Quantitè: 3000

Multiple: 3000

DÉLAI DE L'USINE 42 Weeks

PRICE (USD)

QTÉ
Prix unitaire
3 000
$0.0592
6 000
$0.0527
12 000
$0.0522
27 000
$0.0521
51 000
$0.0519
102 000
$0.0518
150 000
$0.0517
252 000 +
$0.0516
Emballage standard du fournisseur
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