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NTMFS5C670NLT1G
The NTMFS5C670NLT1G is a single N-Channel power MOSFET rated for 60V with a maximum on-resistance of 6.1 mΩ and a continuous drain current of 71A. ...
DESCRIPTION
The NTMFS5C670NLT1G is a single N-Channel power MOSFET designed for high-efficiency power management applications. It operates with a drain-to-source voltage (VDSS) of 60 V and supports a maximum continuous drain current (ID) of 71 A at a case temperature of 25°C. This device features a very low on-resistance (RDS(on)) of 6.1 mΩ (max) at a gate voltage of 10 V, which minimizes conduction losses. Housed in a compact 5x6 mm DFN5 package, this RoHS compliant MOSFET is ideal for space-constrained designs requiring high power density and efficiency.
Mots-clés de recherche: NTMFS5C670NLT1G
SPÉCIFICATIONS
EN STOCK: 200
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sur commande:
4 500
Peut expédier 9/8/27
Quantité minimale de commande: 100
DÉLAI DE L'USINE 60 Semaines
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