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BIDW20N60T

Bourns

IGBT Discrete 600V - 20A - TO-247 - -55°C to +150°C ...

Fiche technique

RoHS Compliant

TUBE Emballage

DESCRIPTION

BIDW20N60T is an N-channel Insulated Gate Bipolar Transistor (IGBT) that combines MOS gate and bipolar transistor technology for high voltage and high current applications. It features advanced trench-gate field-stop technology providing a collector-emitter voltage of 600 V, continuous collector current of 20 A, and low collector-emitter saturation voltage (VCE(sat)) of 1.7 V typical at 25°C. The device offers total power dissipation of 192 W, low switching losses with turn-on energy of 1 mJ and turn-off energy of 0.3 mJ, and operates over a junction temperature range of -55°C to +150°C. Common applications include switch-mode power supplies (SMPS), uninterruptible power sources (UPS), power factor correction (PFC), and stepper motor drives where optimized conduction and low switching losses are essential.

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SPÉCIFICATION

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fournisseur:

Bourns

Référence:

BIDW20N60T

Unité de mesure:

Per Each

RoHS:

Yes

HTS:

8541290095

COO:

ECCN:

EAR99

Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.