1N5811
Ultrafast Diode - 150 V - 3 A - 875 mV @ 4 A Forward (Vf) (Max) @ If - Fast Recovery =< 500ns, > 200mA (Io) - B, Axial Package - Through Hole. ...
DESCRIPTION
The 1N5811 from Microchip Technology is diode with fast recovery =< 500ns, > 200mA (Io), 150 V DC reverse voltage (Max) and 3 A average rectified current. This B, axial package diode has 875 mV @ 4 A forward (Vf) (Max) @ If. Dimensions of this diode are: 3.61 mm diameter x 7.62 mm length.Operating temperature range is from -65°C to 175°C.
Mots-clés de recherche: 1N5811
SPÉCIFICATIONS
EN STOCK: 0
sur commande:
300
Peut expédier 8/24/26
Quantité minimale de commande: 5
DÉLAI DE L'USINE 34 Semaines
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