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APT50GN60BDQ3G
The APT50GN60BDQ3G is a 600V Field Stop Trench Gate IGBT designed for low-frequency applications requiring minimal conduction loss. ...
DESCRIPTION
The APT50GN60BDQ3G is a 600V Insulated Gate Bipolar Transistor (IGBT) that utilizes advanced Field Stop and Trench Gate technologies for ultra-low VCE(ON). It features a continuous collector current of 107A at 25°C, a total power dissipation of 366W, and is rated for a maximum junction temperature of 175°C. The device offers a 6µs short circuit capability, while low gate charge and tight parameter distribution simplify gate drive design and enable easy paralleling. Its characteristics make it ideal for low-frequency power applications such as welding, inductive heating, solar inverters, motor drives, and uninterruptible power supplies (UPS).
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DÉLAI DE L'USINE 26 Semaines
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