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JANTX2N3019S

Bipolar (BJT) Transistor - NPN - 1A Ic - 80V Collector Emitter Breakdown (Max) - 800 mW - TO-39 Package - Through Hole.

RoHS Compliant

DESCRIPTION

The JANTX2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Operating temperature range is from -65°C to 200°C (TJ).

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fournisseur:

Microchip Technology

Référence:

JANTX2N3019S

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Per Each

RoHS:

Yes

HTS:

8541210095

COO:

ECCN:

EAR99

Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.