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TN0604N3

N-Channel Enhancement-Mode Vertical DMOS FET - 40V Vdss - 700mA (Id) @ 25°C - 750mOhm @ 1.5A, 10V Rds On (Max) @ Id, Vgs - TO-92-3.

Fiche technique

Non-Compliant

Discontinued & Replaced

DESCRIPTION

The TN0604N3 low-threshold, Enhancement-mode (normally-off) transistor uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and

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fournisseur:

Microchip Technology

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TN0604N3

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ECCN:

EAR99

Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.