TN2124K1-G
MOSFET Transistor - DMOS - N Channel - 134 mA - 240 V - 15 ohm - 4.5 V - 2 V. ...
DESCRIPTION
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Mots-clés de recherche: TN2124K1G
SPÉCIFICATIONS
EN STOCK: 5 000
Peut être expédié immédiatement
Stock du fabricant: 185 985 Peut expédier 8/17/26
Quantité minimale de commande: 500
DÉLAI DE L'USINE 4 Semaines Peut expédier 8/28/26
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