TN2124K1-G
Microchip TechnologyMOSFET Transistor - DMOS - N Channel - 134 mA - 240 V - 15 ohm - 4.5 V - 2 V. ...
DESCRIPTION
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Search Keywords: TN2124K1G
SPÉCIFICATION
EN STOCK: 5,000
Peut être expédié immédiatement
Manufacturer Stock: 9 000 Peut expédier 6/29/26
Commande min Quantitè: 500
DÉLAI DE L'USINE 4 Weeks Peut expédier 7/13/26
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