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1N5820G
The 1N5820G is a 3.0 A, 20 V axial-lead Schottky barrier rectifier designed for high-efficiency applications. ...
DESCRIPTION
The 1N5820G is a 3.0 A Schottky barrier rectifier that employs a metal-to-silicon power diode design. It is characterized by a low forward voltage, with a maximum of 0.475 V at its rated forward current of 3.0 A, and a peak repetitive reverse voltage of 20 V. This device features majority carrier conduction, which results in low stored charge, high efficiency, and minimal power loss. Due to these characteristics, it is ideally suited for use as a rectifier in low-voltage, high-frequency inverters, as well as for free-wheeling and polarity protection applications.
Mots-clés de recherche: 1N5820G
SPÉCIFICATIONS
EN STOCK: 3 000
Peut être expédié immédiatement
sur commande:
3 500
Peut expédier 3/31/27
Quantité minimale de commande: 500
Ce modèle de message est utilisé pour informer un affilié qu'une certaine commande a été payée. La commande obtient le statut Payée lorsque le montant a été débité.: 500
DÉLAI DE L'USINE 30 Semaines
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