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2N7000 by onsemi
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2N7000

onsemi

N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω

Fiche technique
RoHS Compliant
Emballage
ACCESSOIRES
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DESCRIPTION

N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω

Search Keywords: 2N7000

SPÉCIFICATION

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Products found: 0
fournisseur:
onsemi
Référence:
2N7000
Unité de mesure:
Per Each
RoHS:
Yes
HTS:
8541210095
COO:
KR
ECCN:
EAR99
Référence: This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
10000
Channel Type:
N
Maximum Continuous Drain Current:
0.2 A
Dimension:
5.2(Max) x 4.19(Max) x 5.33(Max) mm
Family:
2N7000
Channel Mode:
Enhancement
Maximum Drain Source Resistance:
5000@10V mOhm
  Different packaging options available.  See Alternatives

EN STOCK: 26,650

Peut être expédié immédiatement

Commande min Quantitè: 250

DÉLAI DE L'USINE 18 Weeks

PRICE (USD)

QTÉ
Prix unitaire
250
$0.1340
1 000
$0.1283
2 500
$0.1231
5 000
$0.1213
10 000
$0.1152
30 000
$0.1109
50 000
$0.1106
100 000 +
$0.1095
Emballage standard du fournisseur
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