2N7000
onsemiN-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω
RoHS Compliant
Certificate of Compliance Guarantee
DESCRIPTION
N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω
Search Keywords: 2N7000
SPÉCIFICATION
Product Attribute
Attribute Value
Select Attribute
Products found: 0
fournisseur:
onsemi
Référence:
2N7000
Unité de mesure:
Per Each
RoHS:
Yes
HTS:
8541210095
COO:
KR
ECCN:
EAR99
Référence:
10000
Channel Type:
N
Maximum Continuous Drain Current:
0.2 A
Dimension:
5.2(Max) x 4.19(Max) x 5.33(Max) mm
Family:
2N7000
Channel Mode:
Enhancement
Maximum Drain Source Resistance:
5000@10V mOhm
Different packaging options available. See Alternatives
EN STOCK: 25,840
Peut être expédié immédiatement
Commande min Quantitè: 250
DÉLAI DE L'USINE 18 Weeks
PRICE (USD)
QTÉ
Prix unitaire
250
$0.2389
1 000
$0.1151
2 500
$0.1129
5 000
$0.1106
10 000
$0.1095
30 000
$0.1092
50 000
$0.1090
100 000
+
$0.1087
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