BD679AS
onsemiThe BD679AS is an NPN epitaxial silicon Darlington transistor designed for medium power linear and switching applications. ...
DESCRIPTION
The BD679AS is a medium power NPN Darlington transistor in a TO-126 package. It features a collector-emitter voltage of 80V and a continuous collector current rating of 4A, with a peak capability of 6A. This device offers a high DC current gain of at least 750 and a total power dissipation of 40W at a 25°C case temperature. Its characteristics make it suitable for a variety of medium power linear and switching applications, such as amplifier stages and power control circuits.
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SPÉCIFICATION
EN STOCK: 7 400
Expédition today, if you order in
Manufacturer Stock: 10 000 Peut expédier 8/3/26
Commande min Quantitè: 100
DÉLAI DE L'USINE 14 Weeks Peut expédier 10/27/26
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